Electron mobility enhancement using ultrathin pure Ge on Si substrate-Reference-Cited by-同舟云学术

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Electron mobility enhancement using ultrathin pure Ge on Si substrate

Published:2005-10 Issue:10 Volume:26 Page:761-763
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chia Ching Yeo ,Byung Jin Cho ,Gao F.,Lee S.J.,Lee M.H.,Yu C.-Y.,Liu C.W.,Tang L.J.,Lee T.W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/32347/01510752.pdf?arnumber=1510752

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on dopant activation and EOT impact in HKMG stacks using microwave annealing with different frequencies;Japanese Journal of Applied Physics;2024-02-15

2. Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors;Advanced Functional Materials;2023-02-26

3. Atomic-Scale Modification of Oxidation Phenomena on the Ge(100) Surface by Si Alloying;ACS Materials Au;2021-12-16

4. Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice;Nanomaterials;2021-05-26

5. Mobility Calculation of Ge Nanowire Junctionless and Inversion-Mode Nanowire NFETs With Size and Shape Dependence;IEEE Transactions on Electron Devices;2018-12

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