Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors
Author:
Affiliation:
1. Department of Materials Science and Engineering, Inha University, Incheon 402-751, South Korea
2. Department of Electronic Engineering, Hanyang University, Seoul 133-791, South Korea
Funder
National Research Foundation of Korea (NRF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4947063
Reference13 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Present status of amorphous In–Ga–Zn–O thin-film transistors
3. Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors
4. Kinetics of solid phase crystallization in amorphous silicon
5. Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films
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