Effect of Single Spinel Phase Crystallization on Drain-Induced-Barrier-Lowering in Submicron Length IZTO Thin-Film Transistors
Author:
Affiliation:
1. Department of Electronic Engineering, Hanyang University, Seoul, Republic of Korea
2. Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, Republic of Korea
Funder
Industry Technology Research and Development Program through the Ministry of Trade, Industry and Energy (MOTIE), South Korea
Samsung Display Company
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10168002/10122220.pdf?arnumber=10122220
Reference22 articles.
1. Boosting carrier mobility and stability in indium–zinc–tin oxide thin-film transistors through controlled crystallization
2. Improvement in performance of indium gallium oxide thin film transistor via oxygen mediated crystallization at a low temperature of 200 °C
3. Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor
4. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack
5. Metal-induced n+/n homojunction for ultrahigh electron mobility transistors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide Transistors;ACS Applied Materials & Interfaces;2024-04-25
2. Influence of NF3 Plasma-Treated HfO2 Gate Insulator Surface on Tin Oxide Thin-Film Transistors;Materials;2023-11-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3