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Improvement in performance of indium gallium oxide thin film transistor via oxygen mediated crystallization at a low temperature of 200 °C

  • Published:2022-05 Issue:9 Volume:48 Page:12806-12812
  • ISSN:0272-8842
  • Container-title:Ceramics International
  • language:en
  • Short-container-title:Ceramics International

Author:

Park Hyeong Jin,Kim Taikyu,Kim Min Jae,Lee Hojae,Lim Jun Hyung,Jeong Jae Kyeong

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Present status of amorphous In-Ga-Zn-O thin-film transistors;Kamiya;Adv. Mater.,2010

2. The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays;Jeong;Sci. Technol.,2011

3. Oxide semiconductor thin-film transistors: a review of recent advances;Fortunato;Adv. Mater.,2012

4. Role of Ga2O3-In2O3-ZnO channel composition on the electrical performance of thin-film transistors;Olziersky;Mater. Chem. Phys.,2011

5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous transistors using amorphous oxide semiconductors;Nomura;Nature,2004
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