Anomalous temperature-dependency of phonon line widths probed by Raman scattering from β-FeSi2 thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3573671
Reference27 articles.
1. Heteroepitaxy of β-FeSi2on Si by gas-source MBE
2. Epitaxial orientation of β-FeSi2/Si heterojunctions obtained by RTP chemical vapor deposition
3. Phase formation in iron silicide nanodots grown by reactive deposition epitaxy on Si(111)
4. Improved initial epitaxial growth of β-FeSi2on Si(111) substrate by Al-doping
5. Raman spectra for β-FeSi2 bulk crystals
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1. Anharmonic effect on the vibrational properties of pristine and Co-doped β-FeSi2 semiconductors;AIP Advances;2023-10-01
2. Investigation of morphological surface features, wetting behavior and mechanical traits under various substrate temperatures for beta iron disilicide prepared via facing-targets sputtering;Materials Science in Semiconductor Processing;2022-08
3. Reverse bias dependent impedance and dielectric properties of Al/n-NC FeSi2/p-Si/Pd heterostructures formed by facing-targets sputtering;Materials Science in Semiconductor Processing;2022-08
4. Impact of annealing temperature and carbon doping on the wetting and surface morphology of semiconducting iron disilicide formed via radio frequency magnetron sputtering;Thin Solid Films;2020-09
5. Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy;AIP Advances;2018-10
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