Improved initial epitaxial growth of β-FeSi2on Si(111) substrate by Al-doping
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference9 articles.
1. Electronic properties of semiconducting FeSi2films
2. Preface
3. V. Borisenko (Ed.), Semiconducting Silicides (Springer, Berlin, 2000).
4. Epitaxial Growth of Al-Doped β-FeSi2on Si by Ion Beam Synthesis
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2. Crystallization of Sputter-Deposited Amorphous (FeSi2)1–xAlx Thin Films;Crystal Growth & Design;2015-03-23
3. Effect of Al incorporation on the crystallization kinetics of amorphous FeSi2 into poly β-FeSi2 film on SiO2/Si(100) substrate;Thin Solid Films;2012-01
4. Anomalous temperature-dependency of phonon line widths probed by Raman scattering from β-FeSi2 thin films;Journal of Applied Physics;2011-04-15
5. Epitaxial growth of Al-doped β-FeSi2on Si(111) substrate by reactive deposition epitaxy;physica status solidi (c);2009-06
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