Epitaxial orientation of β-FeSi2/Si heterojunctions obtained by RTP chemical vapor deposition
Author:
Publisher
EDP Sciences
Subject
Instrumentation
Link
http://mmm.edpsciences.org/10.1051/mmm:01993004010500/pdf
Reference11 articles.
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Anomalous temperature-dependency of phonon line widths probed by Raman scattering from β-FeSi2 thin films;Journal of Applied Physics;2011-04-15
2. Epitaxial growth of (100)-oriented β-FeSi2 film on 3CSiC(100) plane;Journal of Crystal Growth;2011-02
3. Iron disilicide formation by Au–Si eutectic reaction on Si substrate;Applied Surface Science;2009-11
4. The effect of ion implantation energy and dosage on the microstructure of the ion beam synthesized FeSi2 in Si;Materials Science and Engineering: B;2005-12
5. Microstructure of β-FeSi2 buried layers synthesis by ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-02
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