Structure and vibrational properties of the dominant O-H center in β-Ga2O3
Author:
Affiliation:
1. Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015, USA
2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA
Funder
National Science Foundation
U.S. Department of Defense
Sigma Xi
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5029921
Reference44 articles.
1. Perspective—Opportunities and Future Directions for Ga2O3
2. State-of-the-art technologies of gallium oxide power devices
3. Guest Editorial: The dawn of gallium oxide microelectronics
4. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
5. A review of Ga2O3materials, processing, and devices
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