cw electro‐optical characteristics and preliminary reliability of double‐heterostructure GaAs‐AlxGa1−xAs lasers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91800
Reference23 articles.
1. Low‐current‐threshold and high‐lasing uniformity GaAs–AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
2. Very low current threshold GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
3. Infrared‐visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double‐heterostructure lasers grown by molecular beam epitaxy
4. Threshold reduction by the addition of phosphorus to the ternary layers of double‐heterostructure GaAs lasers
5. Low‐threshold double heterojunction AlGaAs/GaAs laser diodes: Theory and experiment
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optoelectronic integrated four-channel transmitter array incorporating AlGaAs/GaAs quantum-well lasers;Journal of Lightwave Technology;1989-01
2. Chapter 2 Molecular Beam Epitaxy for III–V Compound Semiconductors;Semiconductors and Semimetals;1985
3. Heterostructure semiconductor lasers prepared by molecular beam epitaxy;IEEE Journal of Quantum Electronics;1984-10
4. Improved AlxGa1−xAs bulk lasers with superlattice interfaces;Applied Physics Letters;1984-01
5. Subject Categories and References Year 1980;Molecular Beam Epitaxy of III–V Compounds;1984
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