Improved AlxGa1−xAs bulk lasers with superlattice interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94588
Reference12 articles.
1. Continuous room‐temperature operation of GaAs‐AlxGa1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy
2. cw electro‐optical characteristics and preliminary reliability of double‐heterostructure GaAs‐AlxGa1−xAs lasers grown by molecular beam epitaxy
3. Interfacial properties of (Al,Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxy
4. Short‐wavelength continuous 300‐K photopumped AlxGa1−xAs‐GaAs quantum well heterostructure laser (λ≳7270 Å)
5. Extrinsic layer at AlxGa1−xAs‐GaAs interfaces
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