Threshold reduction by the addition of phosphorus to the ternary layers of double‐heterostructure GaAs lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1655020
Reference25 articles.
1. GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers
2. Interface stress of AlxGa1−xAs–GaAs layer structures
3. Etch Pit Studies of GaP Liquid Phase Epitaxial Layers
4. Strain‐induced degradation of GaAs injection lasers
5. Stress compensation in Ga1−xAlxAs1−yPy LPE layers on GaAs substrates
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1. Molecular-beam epitaxial growth of GaxIn1−xP–GaAs (x∼0.5) double heterojunction laser diodes using solid phosphorus and arsenic valved cracking cells;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-03
2. Exploration of entire range of III–V semiconductors and their device applications;Materials Science and Technology;1995-01
3. High-power laser diodes based on InGaAsP alloys;Nature;1994-06
4. Luminescence from AI0.28Ga0.72AS0.62P0.38 layers grown on GaAs0.61P0.39 substrates by liquid-phase epitaxy;Journal of Electronic Materials;1992-10
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