Chapter 2 Molecular Beam Epitaxy for III–V Compound Semiconductors-Reference-Cited by-同舟云学术

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Chapter 2 Molecular Beam Epitaxy for III–V Compound Semiconductors

Published:1985 Issue: Volume: Page:95-207
ISSN:0080-8784
Container-title:Semiconductors and Semimetals
language:
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Author:

Tsang W.T.

Publisher

Elsevier

Reference186 articles.

1. Optically pumped 1.55‐μm double heterostructure GaxAlyIn1−x−yAs/AluIn1−uAs lasers grown by molecular beam epitaxy

2. Reduced threshold current temperature dependence in double heterostructure lasers due to separate p-n and heterojunctions

3. Interaction of Ga and As2 Molecular Beams with GaAs Surfaces

4. Surface stoichiometry and structure of GaAs

5. Asahi, H., Kawamura, Y., Nagai, H. and Ikegami, T. (1982). Int. Semicond. Laser Conf., Ottawa, Pap. 2

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Introduction;Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures;1999

2. Introduction;Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures;1996

3. Growth of Quantum Confined Structures by Molecular Beam Epitaxy;VLSI Electronics Microstructure Science;1994

4. MBE growth of pseudomorphic HEMT structures for MMIC applications;Microelectronics Journal;1993-12

5. Optoelectronic semiconductor devices;Perspectives for Parallel Optical Interconnects;1993

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