1. Useful reviews on detectors can be found, e.g., in Tsang W.T.: Semiconductors and Semimetals, Willardson, R.K., and Beer, A.C., eds., Academic Press, 22D and 22E, 1985; Scribner D.A., Kruer M.R., Killiany J.M.: Infrared focal plane array technology, Proc. IEEE, 79, 1991, pp 66–85.
2. Casey Jr, H.C., Panish, M.B.: Liquid phase epitaxy. In Heterostructure Lasers, Part B, Academic Press, 1978, pp 109–132.
3. Nakajima, K.: The liquid phase epitaxial growth of InGaAsP. In Semiconductors and semimetals,, 22 A, 1985, pp 1–93.
4. Botez, D.: Liquid phase epitaxy over channelled substrates. J. Cryst. growth, 70, 1984, pp 150–154.
5. Thulke, W.: Can liquid-phase epitaxy still be useful for optoelectronic devices. In Materials for optoelectronic devices, OEICs and photonics, Proc. of E-MRS Conference, Strasbourg, Nov. 27–30, 1990, pp 61–67.