Boron and phosphorus diffusion in strained and relaxed Si and SiGe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1602564
Reference53 articles.
1. Point defects and dopant diffusion in silicon
2. Effects of strain on boron diffusion in Si and Si1−xGex
3. Diffusion of boron in heavily dopedn‐ andp‐type silicon
4. A Monte Carlo study of the kickout mechanism of boron diffusion in silicon
5. Ab initiopseudopotential calculations of B diffusion and pairing in Si
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