Low-temperature formation of SiO2 layers using a two-step atmospheric pressure plasma-enhanced deposition-oxidation process
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2801516
Reference19 articles.
1. Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma
2. Significant enhancement of Si oxidation rate at low temperatures by atmospheric pressure Ar∕O2 plasma
3. Formation of silicon dioxide layers at low temperatures (150—400°C) by atmospheric pressure plasma oxidation of silicon
4. Enhancement of oxidation rate of a-Si nanoparticles during dehydrogenation
5. Reliability of SiC MOS devices
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