Author:
Singh Ranbir,Hefner Allen R.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Band offsets and electronic structure of SiC/SiO2 interfaces;Afanasev;Journal of Applied Physics,1996
2. Temperature dependence of Fowler–Nordheim current in 6H– and 4H–SiC MOS capacitors;Agarwal;IEEE Electron Device Letters,1997
3. Li H-f, Dimitrijev S, Sweatman D, Harrison HB. Analysis of Fowler–Nordheim injection in NO nitrided gate oxide grown on n-type 4H–SiC. Proc 22nd International Conference on Microelectronics (MIEL 2000), vol. 1, Nis, Serbia, 2000. pp. 331–333
4. Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures;Chanana;Applied Physics Letters,2000
5. Temperature dependence of the Fowler–Nordheim current in metal-oxide-degenerate structures;Pananakakis;Journal of Applied Physics,1995
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