Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures-Reference-Cited by-同舟云学术

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Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures

Published:2000-10-16 Issue:16 Volume:77 Page:2560-2562
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chanana R. K.,McDonald K.,Di Ventra M.,Pantelides S. T.,Feldman L. C.,Chung G. Y.,Tin C. C.,Williams J. R.,Weller R. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1318229

Reference14 articles.

1. Electron emission in intense electric fields

2. Fowler‐Nordheim Tunneling into Thermally Grown SiO2

3. High‐field transport in SiO2on silicon induced by corona charging of the unmetallized surface

4. Metal‐oxide‐semiconductor field‐effect‐transistor substrate current during Fowler–Nordheim tunneling stress and silicon dioxide reliability

5. Anode hole injection and trapping in silicon dioxide

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