Metal‐oxide‐semiconductor field‐effect‐transistor substrate current during Fowler–Nordheim tunneling stress and silicon dioxide reliability
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357438
Reference28 articles.
1. Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation
2. Two components of tunneling current in metal‐oxide‐semiconductor structures
3. The effect of channel hot-carrier stressing on gate-oxide integrity in MOSFETs
4. Impact of snapback-induced hole injection on gate oxide reliability of N-MOSFETs
5. Effect of hot-carrier injection on n- and pMOSFET gate oxide integrity
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