Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs
Author:
Affiliation:
1. The Ohio State University,Dept. of Electrical & Computer Engineering,Columbus,Ohio,USA
2. Ford Motor Company,Dearborn,Michigan,USA
Funder
Ford Motor Company
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118276.pdf?arnumber=10118276
Reference22 articles.
1. Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs
2. Gate Leakage Current and Time-Dependent Dielectric Breakdown Measurements of Commercial 1.2 kV 4H-SiC Power MOSFETs
3. Gate Oxide Instability and Lifetime in SiC MOSFETs under a Wide Range of Positive Electric Field Stress
4. Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films
5. Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs
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1. Investigation on gate oxide reliability under gate bias screening for commercial SiC planar and trench MOSFETs;Materials Science in Semiconductor Processing;2024-05
2. Characterization of Interface Trap Density in SiC MOSFETs Subjected to High Voltage Gate Stress;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
3. Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC under the Constant Current Stress;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
4. Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETs;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
5. Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs;Materials;2024-03-22
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