Gate Leakage Current and Time-Dependent Dielectric Breakdown Measurements of Commercial 1.2 kV 4H-SiC Power MOSFETs-Reference-Cited by-同舟云学术

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Gate Leakage Current and Time-Dependent Dielectric Breakdown Measurements of Commercial 1.2 kV 4H-SiC Power MOSFETs

Published:2019-10 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Liu Tianshi,Zhu Shengnan,Yu Susanna,Xing Diang,Salemi Arash,Kang Minseok,Booth Kristen,White Marvin H.,Agarwal Anant K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8975928/8998758/08998792.pdf?arnumber=8998792

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

2. Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

3. Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs;2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2022-11-07

4. 1200-V SiC MOSFET Short-Circuit Ruggedness Evaluation and Methods to Improve Withstand Time;IEEE Journal of Emerging and Selected Topics in Power Electronics;2022-10

5. Time-dependent Multiple Gate Voltage Reliability of Hybrid Ferroelectric Charge Trap Gate Stack (FEG) GaN HEMT for Power Device Applications;2022 IEEE Latin American Electron Devices Conference (LAEDC);2022-07-04

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