Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs-Reference-Cited by-同舟云学术

Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs

Published:2022-11-07 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
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Author:

Shi Limeng¹,Liu Tianshi¹,Zhu Shengnan¹,Qian Jiashu¹,Jin Michael¹,Maddi Hema Lata Rao¹,White Marvin H.¹,Agarwal Anant K.¹

Affiliation:

1. The Ohio State University,Dept. of Electrical & Computer Eng.,Columbus,OH,USA

Funder

Ford Motor Company

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9955039/9955045/09955295.pdf?arnumber=9955295

Reference10 articles.

1. Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs

2. Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs

3. A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Lifetime Extraction and Modeling;moens;2020 IEEE 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),2020

4. Physically-based threshold voltage determination for MOSFET's of all gate lengths

5. Reliability of SiC MOS devices

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