Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC under the Constant Current Stress
Author:
Affiliation:
1. The Ohio State University,Department of Electrical and Computer Engineering,Columbus,Ohio,USA
2. Ford Motor Company,Dearborn,Michigan,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529389.pdf?arnumber=10529389
Reference17 articles.
1. Overview of Silicon Carbide Power Devices;Hangseok,2016
2. SiC Is Replacing Si in Electric Vehicles,2020
3. ROHM Gen 4: A Technical Review;Russell,2022
4. The Demand is Surging for SiC Substrates and Power Semiconductors,2019
5. Comparison of Commercial Planar and Trench SiC MOSFETs by Electrical Characterization of Performance-Degrading Near-Interface Traps
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