Investigation of the Constant Current Stress for Charge-to-breakdown Extraction in Commercial SiC Power MOSFETs-Reference-Cited by-同舟云学术

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Investigation of the Constant Current Stress for Charge-to-breakdown Extraction in Commercial SiC Power MOSFETs

Published:2023-12-04 Issue: Volume: Page:1-4
ISSN:
Container-title:2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
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Author:

Qian Jiashu¹,Shi Limeng¹,Jin Michael¹,Bhattacharya Monikuntala¹,Yu Hengyu¹,White Marvin H.¹,Agarwal Anant K.¹,Shimbori Atsushi²,Xu Zhuxian²

Affiliation:

1. The Ohio State University,Dept. of Electrical and Computer Engineering,Columbus,OH,USA,43210

2. Ford Motor Co,Dearborn,MI,USA,48126

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10382185/10382163/10382231.pdf?arnumber=10382231

Reference14 articles.

1. Overview of Silicon Carbide Power Devices;Choi;Fairchild Semiconductor,2016

2. A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

3. Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

4. Reliability of SiC MOS devices

5. Review and analysis of SiC MOSFETs’ ruggedness and reliability

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC under the Constant Current Stress;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

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