1. Review of Silicon Carbide Power Devices and Their Applications
2. SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors
3. 2014 CIPS 2014; 8th Int. Conf. on Integrated Power Electronics Systems Nuremberg Germany R. Ouaida C. Calvez A. Podlejski Evolution of electrical performance in new generation of SiC MOSFET for high temperature applications 1 5
4. 2016 2016 IEEE Applied Power Electronics Conf. and Exposition (APEC) Long Beach CA V. Pala G. Wang B. Hull Record‐low 10mΩ SiC MOSFETs in TO‐247 rated at 900 V 979 982
5. 2017 PCIM Europe 2017; Int. Exhibition and Conf. for Power Electronics Intelligent Motion Renewable Energy and Energy Management Nuremberg Germany D. Peters T. Basler B. Zippelius The new CoolSiC™ trench MOSFET technology for low gate oxide stress and high performance 1 7