Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3698492
Reference32 articles.
1. Uniaxial-process-induced strained-Si: extending the CMOS roadmap
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3. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
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5. TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs
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