Experimental Study and Characterization on the Thermo-Electro Multiphysics Coupling Failure of GaN HEMTs Under High-Power Microwave Pulse-Reference-Cited by-同舟云学术

Experimental Study and Characterization on the Thermo-Electro Multiphysics Coupling Failure of GaN HEMTs Under High-Power Microwave Pulse

Published:2023-11 Issue:11 Volume:70 Page:5619-5625
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Li Xiangdong¹^ORCID,Yuan Jiahui¹^ORCID,Wang Hongyue²^ORCID,Cai Zongqi²^ORCID,Shao Weiheng²^ORCID,Chen Yiqiang²^ORCID,Zheng Xuefeng¹^ORCID,Zhang Jincheng¹^ORCID,Hao Yue¹^ORCID

Affiliation:

1. Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, China

2. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou, Guandong, China

Funder

National Key Research and Development Program of China

Youth Fund of the National Natural Science Foundation of China

Key Research and Development Program of Guangzhou

National Natural Science Foundation of China

Key Research and Development Program of Guangdong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10294316/10273618.pdf?arnumber=10273618

Reference34 articles.

1. Analysis of electro-thermal-stress failure of the LDMOS FET under HPM pulses

2. A Systems-Based Risk Assessment Framework for Intentional Electromagnetic Interference (IEMI) on Critical Infrastructures

3. Role of electrochemical reactions in the degradation mechanisms of AlGaN/GaN HEMTs;gao;Proc CS MANTECH Int Conf Compd Semicondectors Manuf Technol,2014

4. Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

5. A Study of High Power Pulsed Characteristics of Low-Noise GaAs MESFET's

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