A Study of High Power Pulsed Characteristics of Low-Noise GaAs MESFET's-Reference-Cited by-同舟云学术

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A Study of High Power Pulsed Characteristics of Low-Noise GaAs MESFET's

Published:1981-12 Issue:12 Volume:29 Page:1298-1310
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:en
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

James D.S.,Dormer L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx6/22/25097/01130556.pdf?arnumber=1130556

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental Study and Characterization on the Thermo-Electro Multiphysics Coupling Failure of GaN HEMTs Under High-Power Microwave Pulse;IEEE Transactions on Electron Devices;2023-11

2. Mechanism of AlGaAs/InGaAs pHEMT Nonlinear Response Under High-Power Microwave Radiation;IEEE Journal of the Electron Devices Society;2020

3. Experiment and Simulation of the Nonlinear and Transient Responses of GaAs PHEMT Injected With Microwave Pulses;IEEE Transactions on Electromagnetic Compatibility;2015-10

4. Burnout properties of microwave pulse injected on GaAs PHEMT;Microelectronics Reliability;2015-02

5. Failure Analysis on Damaged GaAs HEMT MMIC Caused by Microwave Pulse;IEEE Transactions on Electromagnetic Compatibility;2014-12

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