Study of the effects of an AlN interlayer on the transport properties of AlGaN∕AlN∕GaN heterostructures grown on SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2432300
Reference19 articles.
1. Fabrication and performance of GaN electronic devices
2. GaN-based modulation doped FETs and UV detectors
3. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
4. Effect of polarization fields on transport properties in AlGaN/GaN heterostructures
5. AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy
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1. Atomic-column resolution quantitative composition analysis of AlN interlayer in MOCVD-grown AlGaN/AlN/GaN heterostructure using HAADF-STEM;AIP Advances;2023-01-01
2. High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates;Applied Physics Letters;2022-08-22
3. Study of Drain Access Resistance in Saturation Region of AlGaN/GaN Heterostructure Field-Effect Transistors;IEEE Transactions on Electron Devices;2022-05
4. Growth of N‐Polar Aluminum Nitride on Vicinal Sapphire Substrates and Aluminum Nitride Bulk Substrates;physica status solidi (b);2020-04
5. High-mobility two-dimensional electron gases at AlGaN/GaN heterostructures grown on GaN bulk wafers and GaN template substrates;Applied Physics Express;2019-11-06
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