High-mobility two-dimensional electron gases at AlGaN/GaN heterostructures grown on GaN bulk wafers and GaN template substrates
Author:
Funder
NSF
ONR
NSF NewLaw
Air Force Office of Scientific Research
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab512c/pdf
Reference31 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. Electron mobility exceeding 160000cm2∕Vs in AlGaN∕GaN heterostructures grown by molecular-beam epitaxy
3. High mobility two-dimensional electron gas in AlGaN∕GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy
4. GaN/NbN epitaxial semiconductor/superconductor heterostructures
5. Electron mobility in very low density GaN∕AlGaN∕GaN heterostructures
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1. Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions;Applied Physics Letters;2022-11-07
2. High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates;Applied Physics Letters;2022-08-22
3. Comparative Spectroscopic Study of Aluminum Nitride Grown by MOCVD in H2 and N2 Reaction Environment;Coatings;2022-06-29
4. N-polar GaN p-n junction diodes with low ideality factors;Applied Physics Express;2022-05-20
5. Very High Density (>10 14 cm −2 ) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures;Advanced Electronic Materials;2022-01-05
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