Growth of N‐Polar Aluminum Nitride on Vicinal Sapphire Substrates and Aluminum Nitride Bulk Substrates-Reference-Cited by-同舟云学术

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Growth of N‐Polar Aluminum Nitride on Vicinal Sapphire Substrates and Aluminum Nitride Bulk Substrates

Published:2020-04 Issue:4 Volume:257 Page:1900588
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Isono Tatsuya¹,Ito Tadatoshi¹,Sakamoto Ryota¹,Yao Yongzhao²,Ishikawa Yukari²,Okada Narihito¹^ORCID,Tadatomo Kazuyuki¹

Affiliation:

1. Graduate School of Sciences and Technology for InnovationYamaguchi University 2-16-1 Tokiwadai, Ube Yamaguchi 755-8611 Japan

2. Materials Research and Development LaboratoryJapan Fine Ceramics Center (JFCC) 2-4-1 Mutsuno, Atsuta Nagoya Aichi 456-0023 Japan

Funder

New Energy and Industrial Technology Development Organization

Murata Science Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900588

Reference28 articles.

1. A differential extended gate-AlGaN/GaN HEMT sensor for real-time detection of ionic pollutants

2. Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

3. AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

4. Nanostructural characterization and two-dimensional electron-gas properties in high-mobility AlGaN∕AlN∕GaN heterostructures grown on epitaxial AlN/sapphire templates

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1. Fabrication of high-quality Al-polar and N-polar AlN templates through self-forming tiny-pit layers and polarity inversion;Journal of Applied Physics;2024-07-11

2. Growth Mechanism of N‐Polar GaN on Vicinal N‐Polar AlN Templates in Metal‐Organic Vapor Phase Epitaxy;physica status solidi (a);2024-06-19

3. Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE;Journal of Applied Physics;2024-05-17

4. Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties;APL Materials;2023-12-01

5. Improvement of electrical properties by insertion of AlGaN interlayer for N-polar AlGaN/AlN structures on sapphire substrates;Japanese Journal of Applied Physics;2023-10-09

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