Total-InGaN-thickness dependent Shockley-Read-Hall recombination lifetime in InGaN quantum wells-Reference-Cited by-同舟云学术

Total-InGaN-thickness dependent Shockley-Read-Hall recombination lifetime in InGaN quantum wells

Published:2020-01-07 Issue:1 Volume:127 Page:013103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhou Renlin¹²,Ikeda Masao¹²,Zhang Feng²,Liu Jianping¹²,Zhang Shuming¹²,Tian Aiqin²^ORCID,Wen Pengyan²,Li Deyao¹²,Zhang Liqun¹²,Yang Hui¹²

Affiliation:

1. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, People’s Republic of China

2. Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People’s Republic of China

Funder

Foundation for Innovative Research Groups of the National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5131716

Reference44 articles.

1. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

2. Quantum‐well thickness dependence of stimulated emission in InGaN/GaN structures

3. High-Power and High-Efficiency InGaN-Based Light Emitters

4. Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses

5. Well Thickness Dependence of the Internal Quantum Efficiency and Carrier Concentration in GaN-Based Multiple Quantum Well Light-Emitting Diodes

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