Quantum‐well thickness dependence of stimulated emission in InGaN/GaN structures-Reference-Cited by-同舟云学术

Quantum‐well thickness dependence of stimulated emission in InGaN/GaN structures

Published:2003-11-24 Issue:7 Volume: Page:2610-2613
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Juršėnas S.¹,Miasojedovas S.¹,Kurilčik G.¹,Žukauskas A.¹,Feng Shih‐Wei²,Cheng Yung‐Chen²,Yang C. C.²,Kuo Cheng‐Ta³,Tsang Jian‐Shihn³

Affiliation:

1. Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, Building III, LT‐2040 Vilnius, Lithuania

2. Graduate Institute of Electro‐Optical Engineering and Department of Electrical Engineering, National Taiwan University 1, Roosevelt Road, Sec. 4, Taipei, Taiwan, R.O.C

3. Advanced Epitaxy Technology Inc., Hsinchu Industrial Park, Hsinchu, Taiwan, R.O.C

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303285

Reference11 articles.

1. Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes edited by S. Nakamura and S. F. Chichibu (Taylor & Francis London 2000).

2. A.Žukauskas M. S.Shur andR.Gaska Introduction to Solid‐State Lighting (Wiley New York 2002).

3. Dimensionality of excitons in laser-diode structures composed ofInxGa1−xNmultiple quantum wells

4. Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells

5. Measured and calculated radiative lifetime and optical absorption ofInxGa1−xN/GaNquantum structures

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