Spontaneous and stimulated emission in quantum structures grown over bulk GaN and sapphire-Reference-Cited by-同舟云学术

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Spontaneous and stimulated emission in quantum structures grown over bulk GaN and sapphire

Published:2005-07 Issue:1 Volume:281 Page:183-187
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Miasojedovas S.,Juršėnas S.,Žukauskas A.,Ivanov V.Yu.,Godlewski M.,Leszczyński M.,Perlin P.,Suski T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes;Nakamura,2000

2. Introduction to Solid-State Lighting;Žukauskas,2002

3. Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganic Chemical Vapor Deposition

4. Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates

5. Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer;Journal of Applied Physics;2013-03-14

2. Direct study of nonlinear carrier recombination in InGaN quantum well structures;physica status solidi (c);2011-06-09

3. Optical gain dynamics in InGaN/InGaN quantum wells;SPIE Proceedings;2008-09-10

4. Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates;Applied Physics Letters;2007-03-26

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