Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses-Reference-Cited by-同舟云学术

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Investigation of optical and electrical properties of GaN-based blue light-emitting diodes with various quantum well thicknesses

Published:2015-07-09 Issue:1 Volume:5 Page:057612
ISSN:1947-7988
Container-title:Journal of Photonics for Energy
language:en
Short-container-title:J. Photon. Energy

Author:

Lin Ying-Wen¹,Wang Chun-Kai¹,Chiou Yu-Zung¹,Chang Hung-Ming²,Chang Shoou-Jinn²

Affiliation:

1. Southern Taiwan University of Science and Technology, Department of Electronic Engineering, No. 1, Nan-Tai Street, Yung-Kang District, Tainan City 71005, Taiwan

2. National Cheng Kung University, Institute of Microelectronics, Department of Electrical Engineering, No. 1, Daxue Road, East District, Tainan City 701, Taiwan

Publisher

SPIE-Intl Soc Optical Eng

Subject

Renewable Energy, Sustainability and the Environment,Atomic and Molecular Physics, and Optics

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency;Crystals;2023-11-23

2. III-nitride nanowires for emissive display technology;Journal of Information Display;2023-11-21

3. Advanced Design of a III‐Nitride Light‐Emitting Diode via Machine Learning;Laser & Photonics Reviews;2023-10-25

4. Total-InGaN-thickness dependent Shockley-Read-Hall recombination lifetime in InGaN quantum wells;Journal of Applied Physics;2020-01-07

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