Highly efficient p-type doping of GaN under nitrogen-rich and low-temperature conditions by plasma-assisted molecular beam epitaxy
Author:
Affiliation:
1. National Research Council, Ottawa, Ontario K1A 0R6, Canada
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5089658
Reference34 articles.
1. Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy
2. A InGaN/GaN quantum dot green (λ=524 nm) laser
3. Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance
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5. Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts
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1. Relevance of Substrate Temperature and Ga Kinetics on Mg Doping in GaN by Plasma-Assisted Molecular Beam Epitaxy;Crystal Growth & Design;2024-08-13
2. Molecular beam epitaxy growth and characterization of AlGaN epilayers in nitrogen-rich condition on Si substrate;Materials Science in Semiconductor Processing;2021-11
3. Mapping the growth of p-type GaN layer under Ga-rich and N-rich conditions at low to high temperatures by plasma-assisted molecular beam epitaxy;Applied Physics Letters;2020-12-21
4. Influence of Mg doping on In adsorption and In incorporation in (In,Ga)N superlattices;Journal of Applied Physics;2020-08-28
5. Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy;Optica Applicata;2020
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