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Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Published:2014-01-22 Issue:7 Volume:47 Page:073001
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Skierbiszewski C,Turski H,Muziol G,Siekacz M,Sawicka M,Cywiński G,Wasilewski Z R,Porowski S

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/47/i=7/a=073001/pdf

Reference90 articles.

1. The Blue Laser Diode

2. Nitride Semiconductors and Devices

3. Group-III nitride quantum heterostructures grown by molecular beam epitaxy

4. Growth and device applications of III-nitrides by MBE

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