Harnessing III-Nitride Built-In Field in Multi-Quantum Well LEDs
Author:
Affiliation:
1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
2. Department of Electrical and Computer Engineering, Cornell University Ithaca, New York 14853, United States
Funder
Narodowe Centrum Nauki
European Health and Digital Executive Agency
Fundacja na rzecz Nauki Polskiej
Publisher
American Chemical Society (ACS)
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.4c02084
Reference33 articles.
1. Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells
2. Effects of macroscopic polarization in III-V nitride multiple quantum wells
3. Spontaneous polarization and piezoelectric field inGaN/Al0.15Ga0.85Nquantum wells: Impact on the optical spectra
4. Effect of Internal Electric Field in Well Layer of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes on Efficiency Droop
5. Nitride light-emitting diodes for cryogenic temperatures
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