Diffusion-limited nonradiative recombination at extended defects in hydride vapor phase epitaxy GaN layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3591173
Reference18 articles.
1. Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics
2. Large area GaN and AlN template substrates fabricated by HVPE
3. Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
4. Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
5. Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques
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