Ultrafast broadband carrier and exciton dynamics of Fe-related centers in GaN

Author:

Wang Jianping1,Shi Fangyuan1ORCID,Wu Xingzhi1,Yang Junyi2,Chen Yongqiang1ORCID,Wu Quanying1ORCID,Song Yinglin2ORCID,Fang Yu1ORCID

Affiliation:

1. Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology 1 , Suzhou 215009, People's Republic of China

2. School of Physical Science and Technology, Soochow University 2 , Suzhou 215006, People's Republic of China

Abstract

The effect of Fe defects on carrier recombination and two-photon induced ultrafast exciton dynamics in GaN crystals were investigated using femtosecond transient absorption spectroscopy. The absorption kinetics exhibited completely different characteristics under different nonequilibrium carrier concentrations and distributions. The carrier recombination mechanisms under different excitation conditions can be interpreted by the model of Fe defect-related energy level. The absorption under one-photon excitation originates from the intraband transition of free holes, and the capture of holes by Fe2+ leads to the decay of the absorption. The ultrafast excitonic state [Fe2+,hVB] formation time under two-photon excitation results in a rapid absorption decay (<20 ps), while the long tail of the absorption response could be attributed to long-lived excitonic state (>100 ns). These findings are crucial to the applications of GaN for ultrafast optoelectronics and integrated nonlinear optics.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Jiangsu Key Disciplines of the Fourteenth Five-Year Plan

Postgraduate Research & Practice Innovation Program of Jiangsu Province

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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