Impact of carrier diffusion on the internal quantum efficiency of InGaN quantum well structures-Reference-Cited by-同舟云学术

Impact of carrier diffusion on the internal quantum efficiency of InGaN quantum well structures

Published:2022 Issue:5 Volume:10 Page:1735-1745
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Nomeika Kazimieras¹^ORCID,Podlipskas Žydrūnas¹^ORCID,Nikitina Mariamija¹,Nargelas Saulius¹^ORCID,Tamulaitis Gintautas¹^ORCID,Aleksiejūnas Ramūnas¹^ORCID

Affiliation:

1. Vilnius University, Institute of Photonics and Nanotechnology, Saulėtekio Ave. 3, LT-10257, Vilnius, Lithuania

Abstract

The higher diffusivity in wider QWs increases the nonradiative recombination rate and reduces IQE.

Funder

Lietuvos Mokslo Taryba

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D1TC04760D

Reference48 articles.

1. Review—On The Search for Efficient Solid State Light Emitters: Past, Present, Future

2. The efficiency challenge of nitride light-emitting diodes for lighting

3. Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation

4. Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction

5. Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD

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