Estimation of Shockley–Read–Hall Lifetime in Homoepitaxial n‐GaN on Low‐Dislocation‐Density GaN Substrates Prepared by Hydride Vapor Phase Epitaxy and Maskless 3D
Author:
Affiliation:
1. Research Center of Ion Beam Technology Hosei University Koganei Tokyo 184-0002 Japan
2. SCIOCS Company Limited Hitachi Ibaraki 319-1418 Japan
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100215
Reference64 articles.
1. Planar Nearly Ideal Edge-Termination Technique for GaN Devices
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4. Accurate dependence of gallium nitride thermal conductivity on dislocation density
5. High Voltage Vertical GaN p-n Diodes With Avalanche Capability
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1. No significant contribution of hole-trap-enhanced conductivity modulation in GaN p+n diodes formed on low-dislocation-density GaN substrates;Japanese Journal of Applied Physics;2022-04-19
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