Morphological and structural analyses of plasma-induced damage ton-type GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1509844
Reference16 articles.
1. Plasma-induced damage to n-type GaN
2. The Link between Gallium Vacancies and Plasma Damage to n-Type GaN
3. Surface Modification and Ohmic Contact Formation to n and p-Type GaN
4. Plasma-induced damage study for n-GaN using inductively coupled plasma reactive ion etching
5. Electrical effects of N2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes
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2. Fabrication and repair of GaN nanorods by plasma etching with self-assembled nickel nanomasks;The European Physical Journal Applied Physics;2021-03
3. Experimental and theoretical study on device-processing-incorporated fluorine in AlGaN/GaN heterostructures;AIP Advances;2020-06-01
4. Self-Healing Thermal Annealing: Surface Morphological Restructuring Control of GaN Nanorods;Crystal Growth & Design;2016-11-16
5. Impact of Plasma-Induced Surface Damage on the Photoelectrochemical Properties of GaN Pillars Fabricated by Dry Etching;The Journal of Physical Chemistry C;2014-05-19
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