Plasma-induced damage study for n-GaN using inductively coupled plasma reactive ion etching-Reference-Cited by-同舟云学术

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Plasma-induced damage study for n-GaN using inductively coupled plasma reactive ion etching

Published:2001 Issue:6 Volume:19 Page:2926
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Khan F. A.,Zhou L.,Kumar V.,Adesida I.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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