Electrical effects of N2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes-Reference-Cited by-同舟云学术

Electrical effects of N2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes

Published:2001-10 Issue:10 Volume:45 Page:1837-1842
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kent D.G,Lee K.P,Zhang A.P,Luo B,Overberg M.E,Abernathy C.R,Ren F,Mackenzie K.D,Pearton S.J,Nakagawa Y

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Shul RJ. In: Pearton SJ, editor. ICP etching of GaN and related alloys, in GaN and related materials II, New York: Gordon and Breach; 1999

2. Adesida I. In: Edgar JH, Strite S, Akasaki I, Amano H, Wetzel C, editors. Properties, processing and applications of GaN and related semiconductors. EMIS Data Reviews No. 23, INSPEC. London: IEE; 1999

3. Highly anisotropic, ultra-smooth patterning of GaN/SiC by low energy electron enhanced etching in DC plasma

4. Molnar B, Eddy Jr CR, Doverspike K. J Appl Phys 1995;78:6132

5. Very low resistance multilayer Ohmic contact to n‐GaN

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive characterization of low-damaged GaN surface exposed to NH3 plasma toward plasma-induced metalorganic chemical vapor deposition;Applied Surface Science;2022-07

2. Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels;Crystals;2022-04-04

3. The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices;Applied Physics Letters;2021-05-31

4. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching;Japanese Journal of Applied Physics;2021-01-13

5. Recovery of p-GaN surface damage induced by dry etching for the formation of p-type Ohmic contact;Applied Physics Express;2019-04-10