The influence of CH4/H2/Ar plasma etching on the conductivity ofn‐type gallium nitride
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360555
Reference11 articles.
1. Defect generation during plasma treatment of semiconductors
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4. Hydrogenation of GaN, AlN, and InN
5. HYDROGEN IN CRYSTALLINE SEMICONDUCTORS: PART II–III–V COMPOUNDS
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2. Influence of reactive-ion-etching depth on interface properties in Al2O3/n-GaN MOS diodes;Japanese Journal of Applied Physics;2019-09-06
3. Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN;Japanese Journal of Applied Physics;2018-11-08
4. Elevated-temperature etching of gallium nitride (GaN) in dual-frequency capacitively coupled plasma of CH4/H2 at 300–500 °C;Vacuum;2018-10
5. Peculiarities of the current-voltage and capacitance-voltage characteristics of plasma etched GaN and their relevance to n-GaN Schottky photodetectors;Journal of Applied Physics;2018-09-14
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