Elevated-temperature etching of gallium nitride (GaN) in dual-frequency capacitively coupled plasma of CH4/H2 at 300

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Elevated-temperature etching of gallium nitride (GaN) in dual-frequency capacitively coupled plasma of CH4/H2 at 300–500 °C

Published:2018-10 Issue: Volume:156 Page:219-223
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Kako Takashi,Liu Zecheng,Ishikawa Kenji^ORCID,Kondo Hiroki,Oda Osamu,Sekine Makoto,Hori Masaru

Funder

Nagoya University

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference49 articles.

1. Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN

2. Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3;Journal of Applied Physics;2023-08-17

2. High-speed etching of gallium nitride substrate using hydrogen-contained atmospheric-pressure plasma;Applied Physics Express;2023-04-01

3. GaN damage-free cyclic etching by sequential exposure to Cl2 plasma and Ar plasma with low Ar+-ion energy at substrate temperature of 400 °C;Journal of Applied Physics;2023-01-24

4. Langasite microstructure etching and characterization method for high temperature devices;Vacuum;2022-09

5. ICP etching of GaN microstructures in a Cl2–Ar plasma with subnanometer-scale sidewall surface roughness;Materials Science in Semiconductor Processing;2022-06

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