Peculiarities of the current-voltage and capacitance-voltage characteristics of plasma etched GaN and their relevance to n-GaN Schottky photodetectors-Reference-Cited by-同舟云学术

Peculiarities of the current-voltage and capacitance-voltage characteristics of plasma etched GaN and their relevance to n-GaN Schottky photodetectors

Published:2018-09-14 Issue:10 Volume:124 Page:104504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chatterjee Abhishek¹²^ORCID,Agnihotri V. K.¹,Khamari Shailesh K.¹,Porwal S.¹,Bose A.³⁴,Joshi S. C.⁴,Sharma T. K.¹²^ORCID

Affiliation:

1. Semiconductor Materials Lab., Raja Ramanna Centre for Advanced Technology, Indore 452013, India

2. Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India

3. Superconducting Cavity Processing and Testing Lab., Raja Ramanna Centre for Advanced Technology, Indore 452013, India

4. Proton Accelerator Group, Raja Ramanna Centre for Advanced Technology, Indore 452013, India

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5042126

Reference48 articles.

1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

2. Semiconductor ultraviolet detectors

3. Electrolytic Etching of GaN

4. Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)

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