Ultranarrow Band UV Detection in GaN with Simple Device Architecture-Reference-Cited by-同舟云学术

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Ultranarrow Band UV Detection in GaN with Simple Device Architecture

Published:2022-11-16 Issue: Volume: Page:2200322
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Physica Rapid Research Ltrs

Author:

Chatterjee Abhishek¹^ORCID,Khamari Shailesh K.¹²,Kumar Ravi¹,Porwal Sanjay¹,Bose Aniruddha²³,Raghavendra S.³,Dixit Vijay Kumar¹²,Sharma Tarun Kumar¹²

Affiliation:

1. Semiconductor Materials Lab. Materials Science Section Raja Ramanna Centre for Advanced Technology Indore 452013 India

2. Homi Bhabha National Institute Department of Atomic Energy Training School Complex, Anushakti Nagar Mumbai 400094 India

3. SCRF Cavity Characterization and Cryogenics Section Raja Ramanna Centre for Advanced Technology Indore 452013 India

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202200322

Reference36 articles.

1. Room Temperature Silicon Detector for IR Range Coated with Ag 2 S Quantum Dots

2. Diamond-Based All-Carbon Photodetectors for Solar-Blind Imaging

3. Ga2O3/GaN Heterostructural Ultraviolet Photodetectors with Exciton-Dominated Ultranarrow Response

4. Improving diode-laser-induced fluorescence detection of airborne biological particles by exciting multiple biofluorophores

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