Influence of pressure on AlN thick films prepared by epitaxial lateral overgrowth through hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

Influence of pressure on AlN thick films prepared by epitaxial lateral overgrowth through hydride vapor phase epitaxy

Published:2024 Issue:11 Volume:26 Page:1565-1570
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Chen Minghao¹^ORCID,Fang Chunlei¹,Zhang Qian¹,Shen Zhijie¹,Ji Jianli²,Tan Shuxin³,Lu Yong¹,Liu Ting¹,Zhang Jicai¹²⁴^ORCID

Affiliation:

1. College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China

2. Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China

3. School of Electronics and Information, Nantong University, Nantong 226019, China

4. State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China

Abstract

Smooth and crack-free (0002) AlN thick films (∼30 μm) were epitaxially grown on trench-patterned AlN/sapphire templates through epitaxial lateral overgrowth (ELO) using hydride vapor phase epitaxy.

Funder

Natural Science Foundation of Guangxi Zhuang Autonomous Region

Specific Research Project of Guangxi for Research Bases and Talents

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Major Scientific and Technological Innovation Project of Shandong Province

Special Project for Research and Development in Key areas of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CE/D3CE01300F

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3. Control of interfacial reactions for the growth of high-quality AlN epitaxial films on Cu(111) substrates

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5. Temperature-dependence of Cl2/Ar ICP-RIE of polar, semipolar, and nonpolar GaN and AlN following BCl3/Ar breakthrough plasma

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1. 2-inch semi-polar (112̄2) AlN templates prepared by high-temperature hydride vapor phase epitaxy;CrystEngComm;2024