Influence of pressure on AlN thick films prepared by epitaxial lateral overgrowth through hydride vapor phase epitaxy

Author:

Chen Minghao1ORCID,Fang Chunlei1,Zhang Qian1,Shen Zhijie1,Ji Jianli2,Tan Shuxin3,Lu Yong1,Liu Ting1,Zhang Jicai124ORCID

Affiliation:

1. College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China

2. Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China

3. School of Electronics and Information, Nantong University, Nantong 226019, China

4. State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, China

Abstract

Smooth and crack-free (0002) AlN thick films (∼30 μm) were epitaxially grown on trench-patterned AlN/sapphire templates through epitaxial lateral overgrowth (ELO) using hydride vapor phase epitaxy.

Funder

Natural Science Foundation of Guangxi Zhuang Autonomous Region

Specific Research Project of Guangxi for Research Bases and Talents

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Major Scientific and Technological Innovation Project of Shandong Province

Special Project for Research and Development in Key areas of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

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