Control of interfacial reactions for the growth of high-quality AlN epitaxial films on Cu(111) substrates-Reference-Cited by-同舟云学术

Control of interfacial reactions for the growth of high-quality AlN epitaxial films on Cu(111) substrates

Published:2017 Issue:48 Volume:19 Page:7307-7315
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Wang Wenliang¹²³⁴⁵,Zheng Yulin¹²³⁴,Li Yuan¹²³⁴,Li Xiaochan¹²³⁴,Huang Liegen¹²³⁴,Li Zhuoran¹²³⁴,Lu Zhenya⁶⁷²³⁴,Li Guoqiang¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices

2. South China University of Technology

3. Guangzhou 510640

4. China

5. Guangdong Choicore Optoelectronics Co. Ltd.

6. Department of Electronic Materials

7. School of Materials Science and Engineering

Abstract

High-quality AlN epitaxial films have been epitaxially grown on Cu(111) substrates by pulsed laser deposition (PLD) through effectively controlling the interfacial reactions between AlN epitaxial films and Cu substrates.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CE/C7CE01803G

Reference39 articles.

1. Defect-Resistant Radiative Performance ofm-Plane Immiscible Al1−xInxN Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters

2. Growth mechanism of AlN on hexagonal BN/sapphire substrate by metal–organic chemical vapor deposition

3. Freestanding single crystal AlN layers grown using the SiC substrate evaporation method

4. Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD

5. The intrinsic thermal conductivity of AIN

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